INA128PA Precision Low Power Mosfet Transistor Instrumentation Amplifiers Printed Circuit Board

INA128PA Precision, Low Power INSTRUMENTATION AMPLIFIERS printed circuit board

FEATURES

● LOW OFFSET VOLTAGE: 50µV max

● LOW DRIFT: 0.5µV/°C max

● LOW INPUT BIAS CURRENT: 5nA max

● HIGH CMR: 120dB min

● INPUTS PROTECTED TO ±40V

● WIDE SUPPLY RANGE: ±2.25 to ±18V

● LOW QUIESCENT CURRENT: 700µA

● 8-PIN PLASTIC DIP, SO-8

APPLICATIONS

● BRIDGE AMPLIFIER

● THERMOCOUPLE AMPLIFIER

● RTD SENSOR AMPLIFIER

● MEDICAL INSTRUMENTATION

● DATA ACQUISITION

DESCRIPTION

The INA128 and INA129 are low power, general purpose instrumentation amplifiers offering excellent accuracy. Their versatile 3-op amp design and small size make them ideal for a wide range of applications. Current-feedback input circuitry provides wide bandwidth even at high gain (200kHz at G = 100).

A single external resistor sets any gain from 1 to 10,000. INA128 provides an industry standard gain equation; INA129’s gain equation is compatible with the AD620.

The INA128/INA129 is laser trimmed for very low offset voltage (50µV), drift (0.5µV/°C) and high common-mode rejection (120dB at G ≥ 100). It operates with power supplies as low as ±2.25V, and quiescent current is only 700µA—ideal for battery operated systems. Internal input protection can withstand up to ±40V without damage.

The INA128/INA129 is available in 8-pin plastic DIP, and SO-8 surface-mount packages, specified for the –40°C to +85°C temperature range. The INA128 is also available in dual configuration, the INA2128.

STOCK LIST

multi emitter transistor

silicon power transistors

INA128PA Precision Low Power Mosfet Transistor Instrumentation Amplifiers Printed Circuit Board Images