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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

Model Number : FDS9435A

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8300pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : P-Channel 30 V 5.3A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Drain-Source Voltage : –30 V

Gate-Source Voltage : ±25 V

Operating Junction Temperature : –55 to +175 °C

Storage Temperature : –55 to +175 °C

Drain Current (Continuous) : –5.3 A

Thermal Resistance, Junction-to-Case : 25 °C/W

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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications

· Power management

· Load switch

· Battery protection

Features

· –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V

RDS(ON) = 80 mW @ VGS = –4.5 V

· Low gate charge

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability

Absolute Maximum Ratings TA=25℃ unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±25 V
ID

Drain Current – Continuous (Note 1a)

– Pulsed

 -5.3 A
-50
PD

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

(Note 1c)

 2.5 W
1.2
1
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C

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Product Tags:

power mosfet ic

      

silicon power transistors

      
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