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P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET

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P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET

Model Number : P10NK80ZFP

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8500pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 800 V 9A (Tc) 40W (Tc) Through Hole TO-220FP

Drain-source Voltage (VGS = 0) : 800 V

Drain-gate Voltage (RGS = 20 kΩ) : 800 V

Gate- source Voltage : ± 30 V

Gate source ESD(HBM-C=100pF, R=1.5KΩ) : 4 KV

Peak Diode Recovery voltage slope : 4.5 V/ns

Operating Junction Temperature : -55 to 150 °C

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STP10NK80Z - STP10NK80ZFP STW10NK80Z

N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET

TYPE VDSS RDS(on) ID Pw

STP10NK80Z

STP10NK80ZFP

STW10NK80Z

800 V

800 V

800 V

< 0.90 Ω

< 0.90 Ω

< 0.90 Ω

9 A

9 A

9 A

160 W

40 W

160 W

■ TYPICAL RDS(on) = 0.78 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY

DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES

■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STP10NK80Z STP10NK80ZFP STW10NK80Z
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 800 V
VGS Gate- source Voltage ± 30 V
ID Drain Current (continuous) at TC = 25°C 9 9 (*) 9 A
ID Drain Current (continuous) at TC = 100°C 6 6 (*) 6 A
IDM (•) Drain Current (pulsed) 36 36 (*) 36 A
PTOT Total Dissipation at TC = 25°C 160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4 KV
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
VISO Insulation Withstand Voltage (DC) - 2500 - V

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

-55 to 150

°C

°C

(•) Pulse width limited by safe operating area

(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(*) Limited only by maximum temperature allowed.

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Product Tags:

npn smd transistor

      

silicon power transistors

      
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