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Model Number : P10NK80ZFP
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 8500pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Description : N-Channel 800 V 9A (Tc) 40W (Tc) Through Hole TO-220FP
Drain-source Voltage (VGS = 0) : 800 V
Drain-gate Voltage (RGS = 20 kΩ) : 800 V
Gate- source Voltage : ± 30 V
Gate source ESD(HBM-C=100pF, R=1.5KΩ) : 4 KV
Peak Diode Recovery voltage slope : 4.5 V/ns
Operating Junction Temperature : -55 to 150 °C
STP10NK80Z - STP10NK80ZFP STW10NK80Z
N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET
| TYPE | VDSS | RDS(on) | ID | Pw |
|
STP10NK80Z STP10NK80ZFP STW10NK80Z |
800 V 800 V 800 V |
< 0.90 Ω < 0.90 Ω < 0.90 Ω |
9 A 9 A 9 A |
160 W 40 W 160 W |
■ TYPICAL RDS(on) = 0.78 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES
■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
| STP10NK80Z | STP10NK80ZFP | STW10NK80Z | |||
| VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 800 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 9 | 9 (*) | 9 | A |
| ID | Drain Current (continuous) at TC = 100°C | 6 | 6 (*) | 6 | A |
| IDM (•) | Drain Current (pulsed) | 36 | 36 (*) | 36 | A |
| PTOT | Total Dissipation at TC = 25°C | 160 | 40 | 160 | W |
| Derating Factor | 1.28 | 0.32 | 1.28 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 4 | KV | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C °C |
||
(•) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed.
Stock Offer (Hot Sell)
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P10NK80ZFP smd power mosfet Power Mosfet Transistor N-CHANNEL Zener-Protected SuperMESH⑩Power MOSFET Images |