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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Model Number : MGW12N120D

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8400pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : IGBT

Collector–Emitter Voltage : 1200 Vdc

Collector–Gate Voltage (RGE = 1.0 MΩ) : 1200 Vdc

Gate–Emitter Voltage — Continuous : ± 20 Vdc

Total Power Dissipation @ TC = 25°C : 125 Watts

Operating and Storage Junction Temperature Range : –55 to 150 °C

Short Circuit Withstand Time : 10 μs

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Insulated Gate Bipolar Transistor with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate

IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operation at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost.

• Industry Standard High Power TO–247 Package with Isolated Mounting Hole
• High Speed Eoff: 150 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit
Collector–Emitter Voltage	V_CES	1200	Vdc
Collector–Gate Voltage (RGE = 1.0 MΩ)	V_CGR	1200	Vdc
Gate–Emitter Voltage — Continuous	V_GE	± 20	Vdc
Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1)	I_C25 I_C90 I_CM	20 12 40	Vdc Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C	P_D	125 0.98	Watts W/°C
Operating and Storage Junction Temperature Range	T_J, T_stg	–55 to 150	°C
Short Circuit Withstand Time (VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)	t_sc	10	μs
Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient	R_θJC R_θJC R_θJA	1.0 1.4 45	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds	T_L	260	°C
Mounting Torque, 6–32 or M3 screw	10 lbfin (1.13 Nm)

(1) Pulse width is limited by maximum junction temperature. Repetitive rating.

PACKAGE DIMENSIONS

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Part NO.

Q'ty

MFG

D/C

Package

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Product Tags:

npn smd transistor

silicon power transistors

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