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2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

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2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

Model Number : 2N2222A

Certification : new & original

Place of Origin : original factory

MOQ : 100pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 20000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 500 mW Through Hole TO-18

collector-base voltage : 75 V

collector-emitter voltage : 40 V

emitter-base voltage : 6 V

collector current (DC) : 800 mA

peak collector current : 800 mA

operating ambient temperature : −65 to +150 °C

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NPN switching transistors 2N2222; 2N2222A

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• Linear amplification and switching.

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

PINNING

PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO

collector-base voltage

2N2222

2N2222A

 open emitter

-

-

60

75

V

V
VCEO

collector-emitter voltage

2N2222

2N2222A

 open base

-

-

30

40

V

V
VEBO

emitter-base voltage

2N2222

2N2222A

 open collector

-

-

5

6

V

V
IC collector current (DC) - 800 mA
ICM peak collector current - 800 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ≤ 25 °C - 500 mW
Tcase ≤ 25 °C - 1.2 W
Tstg storage temperature -65 +150 °C
Tj junction temperature - 200 °C
Tamb operating ambient temperature -65 +150 °C

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Product Tags:

multi emitter transistor

      

silicon power transistors

      
Wholesale 2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES from china suppliers

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